FET: Crss Test

Measures the device Reverse transfer capacitance. Requires the N1272A Device Capacitance Selector SMU.

Used with:

  • B1506A: FET DUT

  • B1505A: FET DUT, CV test type
Set the test parameters based on the specifications in the device's data sheet:
- If the data sheet lists a maximum test limit for a parameter, use that value.
- If there is no maximum test limit, use a typical value.

See also Setting IV and CV Test Parameters.

Test Schematic

Gate Parameters

Drain Parameters

Example

In this example, the discrete power FET is used as the example test device.

This device has the following basic characteristics.

  • VDSS: 2500V
  • ID: max 1.5 A (pulse)

General Settings:

  1. Choose FET as Device Type.
  2. Select the checkbox for either the Ciss, Coss, or Crss test.
  3. Set the measurement frequency to 1 MHz.

Base/Gate Voltage Bias:

  1. Set the gate voltage to 0 V to make the device turn off.

Collector/Drain Voltage Sweep:

  1. Set the sweep collector voltage from 0 V to 40 V.
  2. Select Linear as SweepOutput.